Enhancement of hot-electron generation rate in Schottky source metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 76, Issue 26, 2000, Pages 3992-3994

  Uchida, Ken ^a   Matsuzawa, Kazuya ^a   Koga, Junji ^a   Takagi, Shin Ichi ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001642115     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126845     Document Type: Article

References (7)

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