Characterization of erbium-silicided Schottky diode junction

IEEE Electron Device Letters

Volumn 26, Issue 6, 2005, Pages 354-356

  Jang, Moongyu ^a   Kim, Yarkyeon ^a   Shin, Jaeheon ^a   Lee, Seongjae ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Equivalent circuit; Erbium silicide; Schottky diode; Trap

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC CURRENT MEASUREMENT; EQUIVALENT CIRCUITS; HOLE TRAPS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; VOLTAGE MEASUREMENT;

ERBIUM SILICIDE; SCHOTTKY DIODE JUNCTION; TRAP DENSITY;

SCHOTTKY BARRIER DIODES;

EID: 20544475666     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.848074     Document Type: Article

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