Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Liow, Tsung Yang ^a,b   Tan, Kian Ming ^a   Chin, Hock Chun ^a   Lee, Rinus T P ^a   Tung, Chih Hang ^b   Samudra, Ganesh S ^a   Balasubramanian, N ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

NONMETALS; SILICON;

CARRIER TRANSPORT CHARACTERISTICS; FINFETS; N -CHANNEL; PERFORMANCE ENHANCEMENTS; PERFORMANCE OPTIMIZATIONS; SOURCE/DRAIN REGIONS;

ELECTRON DEVICES;

EID: 46049119670     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346815     Document Type: Conference Paper

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