The impact of uniaxial strain engineering on channel backscattering in nanoscale MOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 174-175

  Lin, Hong Nien ^a   Chen, Hung Wei ^b   Ko, Chih Hsin ^b   Ge, Chung Hu ^b   Lin, Horng Chih ^a   Huang, Tiao Yuan ^a   Lee, Wen Chin ^b   Tang, Denny D ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; BALLISTICS; MOSFET DEVICES; TENSILE STRESS; VELOCITY;

CHANNEL BACKSCATTERING; NANOSCALE MOSFET; STRAIN POLARITIES; UNIAXIAL STRAIN ENGINEERING;

STRAIN MEASUREMENT;

EID: 33745134717     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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