A study of the damage on FIB-prepared TEM samples of AlxGa 1-xAs

Journal of Electron Microscopy

Volumn 53, Issue 5, 2004, Pages 471-477

  Yabuuchi, Yasufumi ^a   Tametou, Sayoko ^a   Okano, Tetsuyuki ^a   Inazato, Sachiko ^a   Sadayama, Shoji ^b   Yamamoto, Yoh ^b   Iwasaki, Koji ^b   Sugiyama, Yasuhiko ^b  

^a Matsushita Technoresearch Inc   (Japan)

^b SII NANOTECHNOLOGY INC   (Japan)

Author keywords

AlGaAs; Damage; FIB; GaAs; SEM; TEM

Indexed keywords

ALUMINUM; ARSENIC; GALLIUM;

ARTICLE; CRYSTALLIZATION; LABORATORY DIAGNOSIS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM; ARSENIC; CRYSTALLIZATION; GALLIUM; MICROSCOPY, ELECTRON, TRANSMISSION; SPECIMEN HANDLING;

ALUMINUM; ALUMINUM ALLOYS; ALUMINUM GALLIUM ARSENIDE; GALLIUM ALLOYS; GALLIUM ARSENIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; ION BEAMS; MILLING (MACHINING); SEMICONDUCTOR ALLOYS;

ACCELERATING VOLTAGES; AL-CONCENTRATION; AMORPHOUS LAYER; DAMAGE; FOCUSED ION BEAM MILLING; FOCUSED IONS BEAMS;

SCANNING ELECTRON MICROSCOPY;

EID: 13444288247     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/dfh062     Document Type: Article

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