Measurement of Ga implantation profiles in the sidewall and bottom of focused-ion-beam-etched structures

Applied Physics Letters

Volumn 84, Issue 17, 2004, Pages 3331-3333

  Park, C M ^a,c   Bain, J A ^a   Clinton, T W ^b   Van Der Heijden, P A A ^b   Klemmer, T J ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b SEAGATE TECHNOLOGY   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR-BEARING SURFACES (ABS); FOCUSED-ION BEAM (FIB) ETCHING; IMPLANTATION DEPTH; ION REDISTRIBUTION;

AUGER ELECTRON SPECTROSCOPY; COMPUTER SIMULATION; ELECTRON BEAMS; ETCHING; GALLIUM; ION BEAMS; MAGNETIC MOMENTS; MONTE CARLO METHODS; SCANNING ELECTRON MICROSCOPY; SPUTTERING;

ION IMPLANTATION;

EID: 2542427614     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1715142     Document Type: Article

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