Damage in III-V compounds during focused ion beam milling

Microscopy and Microanalysis

Volumn 11, Issue 5, 2005, Pages 446-455

  Rubanov, S ^a   Munroe, P R ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Focused ion beam; Sample preparation; Semiconducting material; Transmission electron microscopy

Indexed keywords

CONFERENCE PAPER; LABORATORY DIAGNOSIS; METHODOLOGY; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY;

MICROSCOPY, ELECTRON, TRANSMISSION; SEMICONDUCTORS; SPECIMEN HANDLING;

EID: 28744449652     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927605050294     Document Type: Conference Paper

References (22)

1. BENDER, H. (1999). Focused ion beam specimen preparation for transmission electron microscopy studies of ULSI devices. In Microscopy of Semiconducting Materials 1999, Institute of Physics Conference Series, vol. 164, pp. 593-602.
2. BENDER, H. & ROUSSEL, P. (1997). Cross-sectional transmission electron microscopy and focused ion beam study of advanced silicon devices. In Microscopy of Semiconducting Materials 1997, Institute of Physics Conference Series, Cullis, A.G. & Beanland, R. (Eds.), vol. 157, pp. 465-168. Bristol, Scotland: Institute of Physics.
3. CAIRNEY, J.M. & MUNROE, P.R. (2003). Redeposition effects in transmission electron microscope specimens of FeAl-WC composites prepared using a focused ion beam miller. Micron 34, 97-107.
4. GIANNUZZI, L.A. & STEVIE, F.A. (1999). A review of focused ion beam milling techniques for TEM specimen preparation. Micron 30, 197-204.
5. JAMISON, R.B., MARDINLY, A.J., SUSNITZKY, D.W. & GRONSKY, R. (2000). Effects of ion species and energy on the amorphization of Si during FIB TEM sample preparation as determined by computational and experimental methods. Microsc Microanal 6 (Suppl.), 526-527.
6. LANGFORD, R.M., OZKAYA, D., HUEY, B. & PETFORD-LONG, A.K. (2001). Broad ion beam milling of focused ion beam prepared transmission electron microscopy cross-section specimens for high resolution electron microscopy using silicon support membranes. In Microscopy of Semiconducting Materials 2001, Institute of Physics Conference Series, Cullis, A.G. & Hutchinson, J.L. (Eds.), vol. 169, pp. 511-514. Bristol, Scotland: Institute of Physics.
7. MARDINLY, J. & SUSNITZKY, D.W. (1998). Transmission electron microscopy of semiconductor-based products. Mat Res Soc Symp Proc 523, 3-12.
8. MATTESON, T.L., SCHWARZ, S.W., HOUGE, E.C., KEMPSHALL, B.W. & GIANNUZZI, L.A. (2002). Electron backscattering diffraction investigation of focused ion beam surfaces. J Elec Mat 31, 33-39
9. MCCAFFREY, J.P., PHANEUF, M.W. & MADSEN, L.D. (2001). Surface damage during ion beam thinning of samples of for transmission electron microscopy. Ultramicroscopy 87, 97-104.
10. OVERWIJK, M.H.F., VAN DEN HEUVEL, F.C. & SULLE-LIEUWMA, C.W.T. (1993). Novel scheme for the preparation of transmission electron microscopy specimens with a focused ion beam. J Vac Sci Technol B 11, 2021-2024.
11. PEARTON, S.J., HOBSON, W.S. & ABERNATHY, C.R. (1989). Ion implantation processing of GaAs and related compounds. Mat Res Soc Symp Proc 147, 261-272.
12. PRENITZER, B.I., URBANIK-SHANNON, C.A., GIANNUZZI, L.A., BROWN, S.R., IRWIN, R.B., SHOFNER, T.L. & STEVIE, F.A. (2003). The correlation between ion beam/materials interactions and practical FIB specimen preparation. Microsc Microanal 9, 216-236.
13. RAJSIRI, S., KEMPSHALL, B.W., SCHWARZ, S.M. & GIANUZZI, L.A. (2002). FIB damage in silicon: Amorphization or Redeposition? Microsc Microanal 8 (Suppl.), 50-51.
14. RUBANOV, S. & MUNROE, P.R. (2001). Investigation of the structure of damage layers in TEM samples prepared using a FIB. J Mater Sci Lett 20, 1181-1183.
15. RUBANOV, S. & MUNROE, P.R. (2004a). FIB-induced damage in silicon. J Microsc 214, 213-221.
16. RUBANOV, S. & MUNROE, P.R. (2004b). The application of FIB milling for specimen preparation from crystalline germanium. Micron 35, 549-556.
17. TEMPLETON, I.M. & CHAMPION, H.G. (1995). Focused ion-beam line profiles: A study of some factors affecting beam broadening. J Vac Sci Technol B 13, 2603-2606.
18. URBANIK, C.A., PRENITZER, B.I., GIANNUZZI, L.A., BROWN, S.R., SHOFNER, T.L., ROSSIE, E., IRWIN, R.B. & STEVIE, F.A. (1999). Characterization of FIB damage in silicon. Microsc Microanal 5, 740-741.
19. WALKER, J.F. & BROOM, R.F. (1997). Surface damage of semiconductor TEM samples prepared by focused ion beams. In Microscopy of Semiconducting Materials X, Institute of Physics Conference Series, Cullis, A.G. & Hutchinson, J.L. (Eds.), vol. 157, pp. 473-478. Bristol, Scotland: Institute of Physics.
20. YAMAGUCHI, A. & NISHIKAWA, T. (1995). Low damage specimen preparation technique for transmission electron microscopy using iodine gas-assisted focused ion beam milling. J Vac Sci Tech B 13, 962-966.
21. YAMAGUCHI, A., SHIBATA, M. & HASHINAGA, T. (1993). Transmission electron microscopy specimen preparation technique using focused ion beam fabrication: Application to GaAs metal-semiconductor field effect transistors. J Vac Sci Tech B 11, 2016-2020.
22. YOUNG, R.J., KIRK, E.C.G., WILLIAMS, D.A. & AHMED, H. (1990). Fabrication of planar and cross-sectional TEM specimens using a focused ion beam. Mat Res Soc Symp Proc 199, 205-216.