High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2 O3 gate insulator

Applied Physics Letters

Volumn 92, Issue 18, 2008, Pages

  Hino, S ^a   Hatayama, T ^a   Kato, J ^a   Tokumitsu, E ^a   Miura, N ^b   Oomori, T ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; GATES (TRANSISTOR); LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE;

CHANNEL MOBILITY; GATE INSULATORS; HIGH FIELD EFFECT MOBILITY; ULTRAHIGH CHANNEL MOBILITY;

MOSFET DEVICES;

EID: 43549103133     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2903103     Document Type: Article

References (6)

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