Chemical bonding in low-k dielectric materials for interconnect isolation: Characterization using XAS and EELS

AIP Conference Proceedings

Volumn 817, Issue , 2006, Pages 117-124

  Schmeisser D ^a   Hoffmann, P ^a   Zheng, F ^b   Himpsel, F ^b   Stegmann, H ^c   Zschech, E ^d  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b University of Wisconsin Madison   (United States)

^c CARL ZEISS SMT AG   (Germany)

^d IBM MICROELECTRONICS   (United States)

Author keywords

Chemical bonding; EELS; Organosilicate glass; XAS

Indexed keywords

EID: 33751245896     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2173540     Document Type: Conference Paper

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