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Applied Physics B: Lasers and Optics

Volumn 93, Issue 2-3, 2008, Pages 497-506

Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers

(6) Kuo, Y K a Yen, S H a Yao, M W a Tsai, M C a Chen, M L a Liou, B T b

a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

b HSIUPING INSTITUTE OF TECHNOLOGY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LASERS; NUMERICAL ANALYSIS; SEMICONDUCTING INDIUM COMPOUNDS;

BARRIER MATERIALS; CHARACTERISTIC TEMPERATURES; INGAASN; LASER STRUCTURES; NUMERICAL STUDIES; QUANTUM-WELL LASERS; SIMULATION PROGRAMS; SIMULATION RESULTS; THRESHOLD CURRENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 55349137342 PISSN: 09462171 EISSN: None Source Type: Journal
DOI: 10.1007/s00340-008-3184-2 Document Type: Article

Times cited : (2)

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