Ridge-width dependence on high-temperature continuous-wave operation of native oxide-confined InGaAsN triple-quantum-well lasers

IEEE Photonics Technology Letters

Volumn 18, Issue 6, 2006, Pages 791-793

  Liu, C Y ^a   Yoon, S F ^a   Fan, W J ^a   Uddin, A ^b   Yuan, S ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c Tinggi Technologies   (Singapore)

Author keywords

Characteristic temperature; InGaAsN; Pulsed anodic oxidation (PAO); Ridge waveguide (RWG) lasers

Indexed keywords

CHARACTERISTIC TEMPERATURE; CONTINUOUS WAVE OPERATION; HIGH OUTPUT POWER; HIGH TEMPERATURE; HIGH-T; INGAASN; LATERAL SPREADING; NATIVE OXIDES; PULSED ANODIC OXIDATION; QUANTUM WELL; RIDGE LASER; RIDGE WAVEGUIDE LASERS; SCATTERING LOSS; TRANSPARENCY CURRENT DENSITY;

ANODIC OXIDATION; CONTINUOUS WAVE LASERS; PULSED LASERS; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

QUANTUM WELL LASERS;

EID: 33846040093     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.871697     Document Type: Article

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