Fabrication of high-performance InGaAsN ridge waveguide lasers with pulsed anodic oxidation

IEEE Photonics Technology Letters

Volumn 16, Issue 11, 2004, Pages 2409-2411

  Liu, C Y ^a   Yoon, S F ^a   Wang, S Z ^a   Fan, W J ^a   Qu, Y ^b   Yuan, S ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

PULSED ANODIC OXIDATION; RIDGE WAVEGUIDE; THRESHOLD CURRENT DENSITY; TRANSPARENCY CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 7744239896     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.835214     Document Type: Article

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