High-performance 1.06-μm selectively oxidized vertical-cavity surface-emitting lasers with InGaAs-GaAsP strain-compensated quantum wells

IEEE Photonics Technology Letters

Volumn 9, Issue 8, 1997, Pages 1057-1059

  Hou, H Q ^a,b   Choquette, K D ^a,b   Geib, K M ^b   Hammons, B E ^b  

^a IEEE   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

1.06 m wavelength; Metalorganic vapor phase epitaxy; Selective oxidation; Strain compensated quantum wells; Vertical cavity surface emitting lasers

Indexed keywords

ELECTRIC CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBSTRATES; THERMOOXIDATION;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031212406     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.605498     Document Type: Article

References (11)

1. R. P. Moeller, and W. K. Burns, "1.06 μm all-fiber gyroscope with noise subtraction," Opt. Lett., vol. 16, pp. 1902-1904, 1991.
2. X. H. Qu, H. Ruda, S. Janz, and A. J. SpringThorpe, "Enhancement of second harmonic generation at 1.06 μm using a quasiphase-matched AlGaAs/GaAs asymmetric quantum well structure," Appl. Phys. Lett., vol. 65, pp. 3176-3178, 1994, and vol. 68, pp. 723, 1996.
3. X. H. Qu, H. Ruda, S. Janz, and A. J. SpringThorpe, "Enhancement of second harmonic generation at 1.06 μm using a quasiphase-matched AlGaAs/GaAs asymmetric quantum well structure," Appl. Phys. Lett., vol. 65, pp. 3176-3178, 1994, and vol. 68, pp. 723, 1996.
4. R. F. Carson, M. L. Lovejoy, K. L. Lear, M. E. Warren, O. Blum, P. K. Seigal, D. C. Craft, S. P. Kilcoyne, and G. A. Patrizi, "Photonics for Z-axis stacking of multi-chip modules," in Proc. IEEE Lasers and Electro-Optics Society 1995 Annu. Meet., San Francisco, CA, 1995, vol. 2, pp. 125-126.
5. K. W. Goossen, J. E. Cunningham, and W. Y. Jan, "Defect-free modulator at 1.06 μm using a strain-balanced multiquantum well," Electron. Lett., vol. 28, pp. 1833-1834, 1992.
6. T. Fukunaga, M. Wada, and T. Hayakawa, "Reliable operation of strain-compensated 1.06 μm InGaAs/lnGaAsP/GaAs single quantum well lasers," Appl. Phys. Lett., vol. 69, pp. 248-250. 1996.
7. H. Q. Hou, H. C. Chui, K. D. Choquette, B. E. Hammons, W. G. Breiland, and K. M. Geib, "Highly uniform and reproducible verticalcavity surface emitting lasers grown by metalorganic vapor phase epitaxy with reflectometer," IEEE Photon. Technol. Lett., vol. 8. pp. 1285-1287, 1996.
8. K. L. Lear and R. P. Schneider, Jr., "Uniparabolic mirror grading for vertical cavity surface emitting lasers," Appl. Phys. Lett., vol. 68, pp. 605-607, 1996.
9. K. D. Choquette, R. P. Schneider, Jr., K. L. Lear, and K. M. Geib, "Low threshold voltage vertical-cavity lasers fabricated by selective oxidation," Electron. Lett., vol. 30, pp. 2043-2044, 1994.
10. K. D. Choquette, R. P. Schneider, M. H. Crawford, K. M. Geib, and J. J. Figiel, "Continuous wave operation of 640-660 nm selectively oxidized AlInGaP vertical-cavity lasers," Electron. Lett., vol. 31, pp. 1145-1146, 1995.
11. J. J. Coleman, "Strained layer quantum well heterostructure lasers," in Quantum Well Lasers P. S. Zory, Ed. New York: Academic, 1993, p. 374.