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Volumn 96, Issue 8, 2004, Pages 4663-4665

Investigation of the optical properties of InGaAsN/GaAs/GaAsP multiple-quantum-well laser with 8-band and 10-band k-p model

(8) Ng, S T a Fan, W J a Yoon, S F a Wang, S Z a Qu, Yi b Liu, C Y b Ma, S G b Yuan, Shu b

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION; CURRENT DENSITY; ENERGY GAP; HAMILTONIANS; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTROMETERS;

CONDUCTION BAND; OPTICAL GAIN; TENSILE STRAIN; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 7544242583 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1792804 Document Type: Article

Times cited : (14)

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