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Volumn 42, Issue 7, 2006, Pages 713-714

The effect of barrier composition on the vertical carrier transport and lasing properties of 1.55-μm multiple quantum-well structures

Author keywords

Carrier transport; Fabry Perot laser; InGaAIAs; InGaAsP; Quantum well (QW); Time resolved photo luminescence

Indexed keywords


EID: 51849096527     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/jqe.2006.876710     Document Type: Article
Times cited : (9)

References (26)
  • 1
    • 0031094977 scopus 로고    scopus 로고
    • 30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 μm wavelength
    • Mar.
    • O. Kjebon, R. Schatz, S. Lourdudoss, S. Nilsson, and B. S. L. Backbom, "30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 μm wavelength," Electron. Lett., vol. 33, pp. 488-489, Mar. 1997.
    • (1997) Electron. Lett. , vol.33 , pp. 488-489
    • Kjebon, O.1    Schatz, R.2    Lourdudoss, S.3    Nilsson, S.4    Backbom, B.S.L.5
  • 2
    • 0038148482 scopus 로고    scopus 로고
    • 40 Gb/s transmission experiment using directly modulated 1.55 μm DBR lasers
    • Piscataway, NJ: IEEE
    • O. Kjebon, M. N. Akram, and R. Schatz, "40 Gb/s transmission experiment using directly modulated 1.55 μm DBR lasers," in Indium Phosphide and Related Materials. Piscataway, NJ: IEEE, 2003, pp. 495-498.
    • (2003) Indium Phosphide and Related Materials , pp. 495-498
    • Kjebon, O.1    Akram, M.N.2    Schatz, R.3
  • 3
    • 0030735127 scopus 로고    scopus 로고
    • 30-GHz bandwidth 1.55-μm strain-compensated InGaAlAS-In-GaAsP MQW laser
    • Jan.
    • Y. Matsui, H. Murai, S. Arahira, S. Kutsuzawa, and Y. Ogawa, "30-GHz bandwidth 1.55-μm strain-compensated InGaAlAS-In-GaAsP MQW laser," IEEE Photon. Technol. Lett., vol. 9, no. 1, pp. 25-27, Jan. 1997.
    • (1997) IEEE Photon. Technol. Lett. , vol.9 , Issue.1 , pp. 25-27
    • Matsui, Y.1    Murai, H.2    Arahira, S.3    Kutsuzawa, S.4    Ogawa, Y.5
  • 4
    • 0032186578 scopus 로고    scopus 로고
    • Enhanced modulation bandwidth for strain-compensated InGaAlAS-InGaAsP MQW lasers
    • Oct.
    • Y. Matsui, H. Murai, S. Arahira, Y. Ogawa, and A. Suzuki, "Enhanced modulation bandwidth for strain-compensated InGaAlAS-InGaAsP MQW lasers," IEEE J. Quantum Electron., vol. 34, no. 10, pp. 1970-1978, Oct. 1998.
    • (1998) IEEE J. Quantum Electron , vol.34 , Issue.10 , pp. 1970-1978
    • Matsui, Y.1    Murai, H.2    Arahira, S.3    Ogawa, Y.4    Suzuki, A.5
  • 5
    • 0032292252 scopus 로고    scopus 로고
    • Novel design scheme for high-speed MQW lasers with enhanced differential gain and reduced carrier transport effect
    • Dec.
    • -, "Novel design scheme for high-speed MQW lasers with enhanced differential gain and reduced carrier transport effect," IEEE J. Quantum Electron., vol. 34, no. 12, pp. 2340-2349, Dec. 1998.
    • (1998) IEEE J. Quantum Electron , vol.34 , Issue.12 , pp. 2340-2349
  • 6
    • 2542481881 scopus 로고    scopus 로고
    • Design optimization of InGaAsP-InGaAlAS 1.55 μm strain compensated MQW lasers for direct modulation applications
    • May
    • M. N. Akram, C. Silfvenius, O. Kjebon, and R. Schatz, "Design optimization of InGaAsP-InGaAlAS 1.55 μm strain compensated MQW lasers for direct modulation applications," Semiconduct. Sci. Technol., vol. 19, pp. 615-625, May 2004.
    • (2004) Semiconduct. Sci. Technol. , vol.19 , pp. 615-625
    • Akram, M.N.1    Silfvenius, C.2    Kjebon, O.3    Schatz, R.4
  • 7
    • 0033601557 scopus 로고    scopus 로고
    • Carrier non-uniformity effects on the internal efficiency of multiquantum well laser
    • Jan.
    • J. Piprek, P. Abraham, and J. E. Bowers, "Carrier non-uniformity effects on the internal efficiency of multiquantum well laser," Appl. Phys. Lett., vol. 74, pp. 489-491, Jan. 1999.
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 489-491
    • Piprek, J.1    Abraham, P.2    Bowers, J.E.3
  • 8
    • 0032650912 scopus 로고    scopus 로고
    • Hole distribution in InGaAsP 1.3 μm multiple quantum well laser structures with different hole confinement energies
    • Apr.
    • C. Silfvenius, G. Landgren, and S. Marcinkevicius, "Hole distribution in InGaAsP 1.3 μm multiple quantum well laser structures with different hole confinement energies," IEEE J. Quantum Electron., vol. 35, pp. 603-607, Apr. 1999.
    • (1999) IEEE J. Quantum Electron , vol.35 , pp. 603-607
    • Silfvenius, C.1    Landgren, G.2    Marcinkevicius, S.3
  • 10
    • 0010404279 scopus 로고    scopus 로고
    • Interwell carrier transport in InGaAsP multiple quantum well laser structures
    • Dec.
    • K. Fröjdh and S. Marcinkevicius, "Interwell carrier transport in InGaAsP multiple quantum well laser structures," Appl. Phys. Lett., vol. 69, pp. 3695-3697, Dec. 1996.
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 3695-3697
    • Fröjdh, K.1    Marcinkevicius, S.2
  • 11
    • 0028378499 scopus 로고
    • Band lineup and in-plane effective mass of InGaAsP or InGaAlAS on InP strained layer quantum well
    • Feb.
    • T. Ishikawa and J. E. Bowers, "Band lineup and in-plane effective mass of InGaAsP or InGaAlAS on InP strained layer quantum well," IEEE J. Quantum Electron., vol. 30, no. 2, pp. 562-570, Feb. 1994.
    • (1994) IEEE J. Quantum Electron , vol.30 , Issue.2 , pp. 562-570
    • Ishikawa, T.1    Bowers, J.E.2
  • 13
    • 0032345402 scopus 로고    scopus 로고
    • Barrier height effects on lasing characteristics of InGaAs/ InGaAlAS strained quantum well lasers
    • May
    • S. H. Park, "Barrier height effects on lasing characteristics of InGaAs/ InGaAlAS strained quantum well lasers," J. Kor. Phys. Soc, vol. 32, pp. 713-717, May 1998.
    • (1998) J. Kor. Phys. Soc , vol.32 , pp. 713-717
    • Park, S.H.1
  • 16
    • 0031650959 scopus 로고    scopus 로고
    • Optically detected carrier transport in III/V semiconductor QW structures: Experiments, model calculations and applications in fast 1.55 μm laser devices
    • H. Hillmer and S. Marcinkevicius, "Optically detected carrier transport in III/V semiconductor QW structures: Experiments, model calculations and applications in fast 1.55 μm laser devices," Appl. Phys. B, vol. 66, pp. 1-17, 1998.
    • (1998) Appl. Phys. B , vol.66 , pp. 1-17
    • Hillmer, H.1    Marcinkevicius, S.2
  • 18
    • 0023961549 scopus 로고
    • Ultrafast luminescence spectroscopy using sum frequency generation
    • Feb.
    • J. Shah, "Ultrafast luminescence spectroscopy using sum frequency generation," IEEE J. Quantum Electron., vol. 24, no. 2, pp. 276-288, Feb. 1988.
    • (1988) IEEE J. Quantum Electron , vol.24 , Issue.2 , pp. 276-288
    • Shah, J.1
  • 20
    • 0033123728 scopus 로고    scopus 로고
    • Cavity length effects on internal loss and quantum efficiency of multiquantum-well lasers
    • May/Jun.
    • J. Piprek, P. Abraham, and J. E. Bowers, "Cavity length effects on internal loss and quantum efficiency of multiquantum-well lasers," IEEE J. Sel. Topics Quantum Electron., vol. 5, no. 3, pp. 643-647, May/Jun. 1999.
    • (1999) IEEE J. Sel. Topics Quantum Electron , vol.5 , Issue.3 , pp. 643-647
    • Piprek, J.1    Abraham, P.2    Bowers, J.E.3
  • 21
    • 0031153283 scopus 로고    scopus 로고
    • Hydride vapor phase epitaxy revisited
    • May/ Jun.
    • S. Lourdudoss and O. Kjebon, "Hydride vapor phase epitaxy revisited," IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 3, pp. 749-767, May/ Jun. 1997.
    • (1997) IEEE J. Sel. Topics Quantum Electron , vol.3 , Issue.3 , pp. 749-767
    • Lourdudoss, S.1    Kjebon, O.2
  • 22
    • 0016484178 scopus 로고
    • Gain spectra in GaAs double heterostruc-ture injection lasers
    • B. W. Hakki and T. L. Paoli, "Gain spectra in GaAs double heterostruc-ture injection lasers," J. Appl. Phys., vol. 46, pp. 3096-3099, 1975.
    • (1975) J. Appl. Phys. , vol.46 , pp. 3096-3099
    • Hakki, B.W.1    Paoli, T.L.2
  • 25
    • 0028385064 scopus 로고
    • Optical quantum noise treated with classical electrical network theory
    • Mar.
    • E. Berglind and L. Gillner, "Optical quantum noise treated with classical electrical network theory," IEEE J. Quantum Electron., vol. 30, no. 3, pp. 846-853, Mar. 1994.
    • (1994) IEEE J. Quantum Electron , vol.30 , Issue.3 , pp. 846-853
    • Berglind, E.1    Gillner, L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.