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Volumn 1, Issue , 1999, Pages 368-369
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Comparison of GaInNAs/GaAs and strain-compensated InGaAs/GaAsP quantum wells for 1200-1300 nm diode lasers
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
NITROGEN;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR LASERS;
DIELECTRIC MIRRORS;
ELECTRON CONFINEMENT;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0033358122
PISSN: 10928081
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (5)
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