Effect of gas mixing ratio on etch behavior of ZrO2 thin films in Cl2 -based inductively coupled plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 6, 2008, Pages 1480-1486

  Efremov, Alexander ^a   Min, Nam Ki ^b   Jin, Sun ^c   Kwon, Kwang Ho ^b  

^a IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

^b Korea University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GASES; HELIUM; INDUCTIVELY COUPLED PLASMA; PHOTORESISTS; THICK FILMS; THIN FILMS; ZIRCONIUM ALLOYS;

ACTIVE SPECIES; ADDITIVE GASSES; ETCH BEHAVIORS; ETCH MECHANISMS; ETCH RATES; GAS MIXING RATIOS; GAS PRESSURES; INITIAL COMPOSITIONS; INPUT POWERS; LANGMUIR PROBE DIAGNOSTICS; MODEL-BASED; PLASMA PARAMETERS;

PLASMAS;

EID: 55349128201     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2998806     Document Type: Article

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