Etching characteristics and mechanism of Au thin films in inductively coupled Cl2/Ar plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 6, 2003, Pages 1837-1842

  Efremov, A M ^a,b   Kim, Dong Pyo ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

^b IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CARRIER CONCENTRATION; CHLORINE; ETCHING; FLUXES; GOLD; INDUCTIVELY COUPLED PLASMA; REACTION KINETICS; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHLORINE RICH PLASMA; NONMONOTONIC ETCH RATE; ZERO DIMENSIONAL MODEL;

THIN FILMS;

EID: 0842290167     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1609460     Document Type: Article

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