Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20 (BTO) and Pt thin films in Cl2/Ar inductively coupled plasma

Microelectronic Engineering

Volumn 85, Issue 7, 2008, Pages 1584-1589

  Efremov, Alexander ^a   Min, Nam Ki ^b   Kim, Sungihl ^c   Kim, Mansu ^b   Nahm, Sahn ^b   Kwon, Kwang Ho ^b  

^a IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

^b Korea University   (South Korea)

^c Daejeon University   (South Korea)

Author keywords

Ba2Ti9O20(BTO); Cl2 Ar plasma modeling; Dissociation; Etch mechanism; Etch rate; Ionization; Pt

Indexed keywords

DISSOCIATION; ETCHING; IONIZATION; MIXING; THIN FILMS;

ETCH MECHANISM; ETCH RATE; PLASMA MODELING;

BARIUM TITANATE;

EID: 46549089695     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.03.003     Document Type: Article

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