Temperature dependence of current-voltage (I-V) characteristics of Pt/Au Schottky contacts on n-type GaN

Journal of Optoelectronics and Advanced Materials

Volumn 10, Issue 10, 2008, Pages 2787-2792

  Ravinandan, M ^a   Rao, P Koteswara ^a   Reddy, V Rajagopal ^a  

^a SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

I V technique; n type GaN; Pt Au schottky contacts; Temperature dependent I V characteristics

Indexed keywords

BIAS VOLTAGE; ELECTRIC RESISTANCE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; SCHOTTKY BARRIER DIODES; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION;

FLAT BAND BARRIER HEIGHTS; I-V TECHNIQUES; N-TYPE GAN; SCHOTTKY CONTACTS; TEMPERATURE DEPENDENCE OF CURRENT; TEMPERATURE DEPENDENCE OF I-V CHARACTERISTICS; TEMPERATURE DEPENDENT I-V CHARACTERISTICS; THERMIONIC EMISSION THEORY;

PLATINUM COMPOUNDS;

EID: 55349121524     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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