P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)

Japanese Journal of Applied Physics

Volumn 28, Issue 12 A, 1989, Pages L2112-L2114

  Amano, Hiroshi ^a   Kito, Masahiro ^a   Hiramatsu, Kazumasa ^a   Akasaki, Isamu ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

GaN; GaN:Mg; Hall effect; LEEBI treatment; P n junction LED; P type conduction; UV LED

Indexed keywords

EID: 84883188181     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.L2112     Document Type: Article

References (8)

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