Role of silicon on the growth mechanisms of CNx and SiCN thin films by N2/CH4 microwave plasma assisted chemical vapour deposition

Surface and Coatings Technology

Volumn 203, Issue 3-4, 2008, Pages 277-283

  Kouakou, Paul ^a,b   Belmahi, Mohammed ^a   Brien, Valérie ^a   Hody, Virginie ^b   Migeon, Henri Noël ^b   Bougdira, Jamal ^a  

^a INSTITUT JEAN LAMOUR   (France)

^b LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY   (Luxembourg)

Author keywords

A Growth models; B Scanning Electron Microscopy (SEM); B Transmission Electron Microscopy (TEM); B X ray diffraction; C PACVD

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; COBALT; DEPOSITION; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; ELECTRONS; FILM GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MASS SPECTROMETRY; MICROWAVES; NITROGEN; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN ALLOYS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

[A] GROWTH MODELS; [B] SCANNING ELECTRON MICROSCOPIES; [B] TRANSMISSION ELECTRON MICROSCOPIES; [B] X-RAY DIFFRACTION; [C] PACVD;

SUBSTRATES;

EID: 55249086470     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2008.09.002     Document Type: Article

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