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Materials Science and Engineering: B

Volumn 85, Issue 1, 2001, Pages 38-42

Effect of silicon impurity on carbon nitride films prepared by microwave plasma chemical vapor deposition

(2) Zhang, Y P a Gu, Y S b

a INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

Author keywords

Carbon nitride; MPCVD; Thin film deposition

Indexed keywords

CHEMICAL BONDS; COMPOSITION EFFECTS; CRYSTALLIZATION; ENERGY DISPERSIVE SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROWAVES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLATINUM; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; STOICHIOMETRY; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY DIFFRACTION ANALYSIS;

MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION (MPCVD);

CARBON NITRIDE;

EID: 0035817437 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)00649-3 Document Type: Article

Times cited : (9)

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