The affinity of Si-N and Si-C bonding in amorphous silicon carbon nitride (a-SiCN) thin film

Diamond and Related Materials

Volumn 14, Issue 3-7, 2005, Pages 1126-1130

  Chen, C W ^a   Huang, C C ^a   Lin, Y Y ^a   Chen, L C ^a   Chen, K H ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

Ab initio; Amorphous silicon carbon nitride; Bonding affinity; XPS

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; ELECTRON CYCLOTRON RESONANCE; ELECTRON TRANSITIONS; NITROGEN; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

AB INITIO; AMORPHOUS SILICON CARBON NITRIDE; BAND GAPS; BONDING AFFINITY;

SILICON COMPOUNDS;

EID: 18444418316     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.10.045     Document Type: Conference Paper

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