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Thin Solid Films

Volumn 303, Issue 1-2, 1997, Pages 66-75

Si-containing crystalline carbon nitride derived from microwave plasma-enhanced chemical vapor deposition

(8) Chen, L C a Bhusari, D M b Yang, C Y b Chen, K H a,b Chuang, T J b Lin, M C c Chen, C K a Huang, Y F d

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES (Taiwan)

c EMORY UNIVERSITY (United States)

d FU JEN CATHOLIC UNIVERSITY (Taiwan)

Author keywords

Chemical vapour deposition (CVD); Nitrides; transmission electron microscopy (TEM); X ray photoelectron spectroscopy (XPS)

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; FILM GROWTH; HIGH TEMPERATURE EFFECTS; NITRIDES; PLASMA APPLICATIONS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON NITRIDE; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (ME PECVD);

SEMICONDUCTING FILMS;

EID: 0031191769 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00041-2 Document Type: Article

Times cited : (80)

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