메뉴 건너뛰기




Volumn 44, Issue 7 B, 2005, Pages 5832-5835

Dependence of acid yield on acid generator in chemically amplified resist for post-optical lithography

Author keywords

Acid generator; Acid yield; Poly(methyl methacrylate); Post optical lithography; Reaction mechanism

Indexed keywords

ELECTRON BEAMS; IONIZING RADIATION; PHOTOLITHOGRAPHY; POLYMETHYL METHACRYLATES; REACTION KINETICS;

EID: 31844448318     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.5832     Document Type: Article
Times cited : (18)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.