Diffusion-temperature-dependent formation of Cu centers in Cu-saturated silicon crystals studied by photoluminescence and deep-level transient spectroscopy

Japanese Journal of Applied Physics

Volumn 47, Issue 6 PART 1, 2008, Pages 4398-4402

  Nakamura, Minoru ^a   Murakami, Susumu ^a   Kawai, Naoyuki J ^b   Saito, Shigeaki ^b   Arie, Hiroyuki ^b  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Concentration of Cu center; Cu center models; Cu saturated Si crystal; Interstitial Cu; Photoluminescence Cu center, 0.1 eV DLTS Cu center; Solubility of Cu; Substitutional Cu

Indexed keywords

CONCENTRATION (PROCESS); CRYSTALLOGRAPHY; CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; LIGHT EMISSION; LUMINESCENCE; PHOTOLUMINESCENCE; POWDERS; SEMICONDUCTOR DOPING; SILICON; SOLUBILITY; TERNARY SYSTEMS;

CONCENTRATION OF CU CENTER; CU CENTER MODELS; CU-SATURATED SI CRYSTAL; INTERSTITIAL CU; PHOTOLUMINESCENCE CU CENTER, 0.1 EV DLTS CU CENTER; SUBSTITUTIONAL CU;

COPPER;

EID: 55049084073     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.4398     Document Type: Article

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