Influences of oxygen and carbon on the formation of the 1.014 eV photoluminescence copper center in silicon crystal

Journal of the Electrochemical Society

Volumn 147, Issue 2, 2000, Pages 796-798

  Nakamura, Minoru ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BORON; CARBON; CHEMICAL BONDS; COPPER; CRYSTAL GROWTH FROM MELT; CRYSTALS; ELECTRON ENERGY LEVELS; IMPURITIES; OXYGEN; PHOSPHORUS; PHOTOLUMINESCENCE;

COPPER CENTER; CZOCHRALSKI GROWN SILICON CRYSTALS; FLOAT ZONE;

SILICON;

EID: 0034140952     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393274     Document Type: Article

References (17)

1. T. J. Shaffner, in Semiconductor Silicon 1990, H. R. Huff, K. G. Barraclough, and J. Chikawa, Editors, PV 90-7, p. 891, The Electrochemical Society Proceedings Series, Penington, NJ (1990).
2. N. S. Minaev, A. V. Mudryi, and V. D. Tkachev, Sou Pliys. Semicond., 13, 233 (1979).
3. J. Weber, H. Bauch, and R. Sauer, Phys. Rev. B, 25,7688(1982).
4. K. G. McGuigan, M. O. Henry, E. C. Lightowlers, A. G. Steele, and M. L. W. The- ' wait. Solid State Commun., 68, 7 (1988).
5. M. Nakamura, S. Ishiwari. and A. Tanaka, Appl. Phys. Lett., 73,2325 (1998).
6. V. Higgs, E. C. Lightow lers, G. Davies, F. Schaffler, and E. Kasper, Semicond. Sei. Teclmol., 4,593(1989).
7. J. L. Regolini, J. P. Stoquert, C. Canter, and P. Siffert, J. Electrochem. Soc., 133, 2165(1986).
8. M. Nakamura, E. Kitamura, Y. Misawa, and T. Suzuki, J. Electrochem. Soc., 141, 3576(1994).
9. M. Nakamura, E. Kitamura, and T. Suzuki, J. Electrocliem. Soc., 143,2876 (1996).
10. E. R. Weber, Appl Phys. A: Solids Surf.. 30, 1 (1983).
11. T. Heiser, S. McHugo, H. Hieslmair, and E. R. Weber, Appl. Phys. Lett., 70, 3576 (1997).
12. See, for example, J. C. Mikkelsen Jr., in Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, 3. C. Mikkelsen, Jr., S. J. Pearton, J. W. Corbett, and S. J. Pennycook, Editors, Vol. 59, p. 19, MRS, Pittsburgh, PA (1986).
13. See, for example, U. Gosele, in Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, J. C. Mikkelsen, Jr., S. J. Pearton, J. W. Corbett, and S. J. Pennycook, Editors, Vol. 59, p. 419, MRS, Pittsburgh, PA (1986).
14. M. Nakamura and H. Iwasaki, J. Appl. Phys., 86,5372 (1999).
15. H. E Wolf, Silicon Semiconductor Data, p. 150, Pergamon Press, Oxford (1969).
16. S. K. Eslrcicher, Phys. Rev. B, 41, 5447 (1990).
17. P. N. Hai, T. Gregorkiewicz, C. A. J. Ammerlaan, and D. T. Don, Phys. Rev. B, 56, 4620(1997).