Concentration study of deep-level Cu center in Cu-diffused Si crystals by deep-level transient spectroscopy and photoluminescence measurements

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 1-3, 2006, Pages

  Nakamura, Minoru ^a   Murakami, Susumu ^a   Hozoji, Hiroshi ^a   Kawai, Naoyuki J ^b   Saito, Shigeaki ^b   Arie, Hiroyuki ^b  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

0.1 eV DLTS Cu center; Concentration of Cu center; Model of Cu center; Photoluminescence Cu center; Silicon crystals; Substitutional and interstitial Cu concentrations

Indexed keywords

CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SILICON; SOLUBILITY;

0.1 EV DLTS CU CENTERS; CONCENTRATION OF CU CENTERS; MODEL OF CU CENTER; PHOTOLUMINESCENCE CU CENTERS; SILICON CRYSTALS; SUBSTITUTIONAL AND INTERSTITIAL CU CONCENTRATIONS;

COPPER;

EID: 32044443887     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L80     Document Type: Article

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