Dielectric breakdown mechanism of HfSiON/SiO2 gate dielectric

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 112-113

  Torii, K ^a   Aoyama, T ^a   Kamiyama, S ^a   Tamura, Y ^a   Miyazaki, S ^b   Kitajima, H ^a   Arikado, T ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Band diagram; HfSiON; High k; Reliability

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; METALLIC FILMS; METALLIZING; RELIABILITY; SILICA; THICKNESS CONTROL;

BAND DIAGRAM; DIELECTRIC BREAKDOWN; GATE DIELECTRIC; GATE STACKS; HIGH-K;

DIELECTRIC MATERIALS;

EID: 4544323186     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M. Koyama et. al., IEDM Tech. Digest, p.931, (2003)
2. A. Shanware et. al., IEDM Tech. Digest, p.939, (2003)
3. T. Aoyama et. al., Ext, Abstract IWGI, p.174, (2003)
4. S. Kamiyama et. al., Ext. Abstract IWGI, p.42, (2003)