Nitride-based green light emitting diodes grown by temperature ramping

Journal of Crystal Growth

Volumn 254, Issue 3-4, 2003, Pages 336-341

  Liu, C H ^a   Su, Y K ^b   Wen, T C ^b   Chang, S J ^b   Chuang, R W ^b  

^a NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

A1. Photoluminescence; A1. Reliability; A3. Metalorganic chemical vapor deposition; A3. Multiple quantum well; A3. Quantum wells; B1. InGaN GaN; B1. Nitrides; B3. Green light emitting diode; B3. Light emitting diodes

Indexed keywords

CRYSTAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

MULTIPLE QUANTUM WELLS (MQW);

LIGHT EMITTING DIODES;

EID: 0037850715     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01194-1     Document Type: Article

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