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Volumn 85, Issue 22, 2004, Pages 5158-5160

Luminescence and lasing in InGaN/GaN multiple quantum well heterostructures grown at different temperatures

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CLADDING (COATING); GALLIUM NITRIDE; HETEROJUNCTIONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

EID: 19944425816     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1830076     Document Type: Article
Times cited : (16)

References (14)
  • 5
    • 6344287078 scopus 로고    scopus 로고
    • NATO Science Series. Series II: Mathematics, Physics and Chemistry, edited by L. Povest Plenum, New York
    • G. P. Yablonskii and M. Heuken, in Towards the First Silicon Laser, NATO Science Series. Series II: Mathematics, Physics and Chemistry, edited by L. Povest (Plenum, New York, 2002), Vol. 93, p. 455.
    • (2002) Towards the First Silicon Laser , vol.93 , pp. 455
    • Yablonskii, G.P.1    Heuken, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.