Advanced characterization techniques of nonuniform indium distribution within InGaN/GaN heterostructures grown by MOCVD

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 795-798

  Lu, D ^a,b   Florescu, D I ^a   Lee, D S ^a   Ramer, J C ^a   Parekh, A ^a   Merai, V ^a   Li, S ^a   Gardner, J J ^c   Begarney, M J ^a   Armour, E A ^a  

^a Veeco Compound Semiconductor Inc   (United States)

^b Department of Electrical and Computer Engineering   (United States)

^c EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ROBINSON BACKSCATTER; SECONDARY ELECTRONS;

BACKSCATTERING; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 20844432840     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200461503     Document Type: Conference Paper

References (9)

1. Shuji Nakamura, Science 281, 956 (1998).
2. Yasuhiko Arakawa, IEEE J. Sel. Top. Quantum Electron. 8, 823 (2002).
3. T. M. Smeeton, M. J. Kappers, J. S. Barnard, M. E. Vikers, and C. J. Humphreys, Appl. Phys. Lett. 83, 5419 (2003).
4. T. M. Smeeton, M. J. Kappers, J. S. Barnard, M. E. Vikers, and C. J. Humphreys, Appl. Phys. Lett. 83, 5419 (2003).
5. S. Keller, B. P. Keller, M. S. Minsky, J. E. Bowers, U. K. Mishra, S. P. DenBaars, and W. Seifert, J. Cryst. Growth 189/190, 29 (1998).
6. D. E. Newbury, D. C. Joy, P. Echlin, C. E. Fiori, and J. I. Goldstein, Advanced Scanning Electron Microscopy and X-Ray Microanalysis (Plenum Press, New York, 1987).
7. Y.-H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 73, 1370 (1998).
8. Y.-T. Moon, D.-J. Kim, J.-S. Park, J.-T. Oh, J.-M. Lee, Y.-W. Ok, H. Kim, and S.-J. Park, Appl. Phys. Lett. 79, 599 (2001).
9. th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XII, Hawaii, 2004).