Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures

Applied Physics Letters

Volumn 80, Issue 12, 2002, Pages 2099-2101

  Musikhin, Yu G ^a   Gerthsen, D ^a   Bedarev, D A ^b   Bert, N A ^b   Lundin, W V ^b   Tsatsul'Nikov, A F ^b   Sakharov, A V ^b   Usikov, A S ^b   Alferov, Zh I ^b   Krestnikov, I L ^c   Ledentsov, N N ^c   Hoffmann, A ^c   Bimberg, D ^c  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DENSE ARRAYS; ENTROPY EFFECTS; GROWTH CONDITIONS; IMAGE EVALUATION; INDIUM CONCENTRATION; INGAN/GAN; ISLAND FORMATION; LATERAL SIZES; MATRIX; NANO DOMAIN; NANO-ISLANDS; NANOISLAND; THERMODYNAMIC MODEL; TRIMETHYLINDIUM; ULTRA-THIN;

GALLIUM NITRIDE; GROWTH TEMPERATURE; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 79955998327     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1462868     Document Type: Article

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