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Volumn 275, Issue 1-2, 2005, Pages

Influence of MQW growth temperature and post-epitaxial annealing on luminescence and laser properties of InGaN/GaN MQW heterostructures grown by MOCVD on sapphire substrates

(11) Gurskii, A L a Pavlovskii, V N a Lutsenko, E V a Zubialevich, V Z a Yablonskii, G P a Kalisch, H b Szymakowski, A b Jansen, R H b Alam, A c Schineller, B c Heuken, M c

a B I STEPANOV INSTITUTE OF PHYSICS (Belarus)

b RWTH AACHEN UNIVERSITY (Germany)

c AIXTRON AG (Germany)

Author keywords

A1. Characterization; A1. Radiation; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ANNEALING; CHARACTERIZATION; CRYSTALLIZATION; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOLUMINESCENCE; RADIATION; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

DEPOSITION TEMPERATURES; EPITAXIAL ANNEALING; LASING; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 20144383623 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.149 Document Type: Conference Paper

Times cited : (3)

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