Origins of stress development during metal-induced crystallization and layer exchange: Annealing amorphous Ge/crystalline Al bilayers

Acta Materialia

Volumn 56, Issue 18, 2008, Pages 5047-5057

  Wang, Z M ^a   Wang, J Y ^a   Jeurgens, L P H ^a   Phillipp, F ^a   Mittemeijer, E J ^a  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

Metal induced crystallization; Nanocrystalline microstructure; Residual stress; Thin films; X ray diffraction

Indexed keywords

ANNEALING; CHLORINE COMPOUNDS; CRYSTALLIZATION; GERMANIUM; METALS; NANOCRYSTALLINE ALLOYS; RESIDUAL STRESSES;

BI-LAYERS; DRIVING FORCES; EX-SITU; IN SITU X-RAY DIFFRACTION; LAYER EXCHANGE; METAL-INDUCED CRYSTALLIZATION; MICRO-STRUCTURAL; NANO-GRAINS; NANOCRYSTALLINE MICROSTRUCTURE; OPERATING MECHANISMS; RAPID CRYSTALLIZATION; REAL TIME; RESIDUAL STRESS; ROOM TEMPERATURES; STRESS DEVELOPMENT; STRESS GENERATION; STRESS-RELAXATION; SUB-LAYERS; TEMPERATURE RANGES; THIN FILMS; X-RAY DIFFRACTION;

ALUMINUM;

EID: 53049094208     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2008.06.026     Document Type: Article

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