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Volumn 25, Issue 1, 2007, Pages 141-147
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Initial nucleation and growth of atomic layer deposited Hf O2 gate dielectric layers on Si surfaces with the various surface conditions using in situ medium energy ion scattering analysis
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC PROPERTIES;
EXTRACTION;
HAFNIUM COMPOUNDS;
ION BEAMS;
NUCLEATION;
SURFACE PROPERTIES;
ATOMIC DENSITY;
ATOMIC LAYER DEPOSITION;
GATE DIELECTRIC LAYERS;
DIELECTRIC MATERIALS;
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EID: 33846205236
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.2402155 Document Type: Article |
Times cited : (13)
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References (31)
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