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Volumn 25, Issue 1, 2007, Pages 141-147

Initial nucleation and growth of atomic layer deposited Hf O2 gate dielectric layers on Si surfaces with the various surface conditions using in situ medium energy ion scattering analysis

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; EXTRACTION; HAFNIUM COMPOUNDS; ION BEAMS; NUCLEATION; SURFACE PROPERTIES;

EID: 33846205236     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2402155     Document Type: Article
Times cited : (13)

References (31)
  • 2
    • 33846224167 scopus 로고    scopus 로고
    • Semiconductor Industry Association, The International Technology Roadmafor Semiconductors.
    • Semiconductor Industry Association, The International Technology Roadmap for Semiconductors.
  • 19


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.