Influence of lattice polarity of nitrogen and aluminum doping on 4H-SiC epitaxial layer

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 79-81

  Kojima, Kazutoshi ^a   Kuroda, Satoshi ^a   Okumura, Hajime ^a   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

C Si ratio; Doping; Epitaxial growth; Lattice polarity; Silicon carbide

Indexed keywords

ALUMINUM; DESORPTION; EPITAXIAL GROWTH; LATTICE CONSTANTS; NITROGEN; SILICON CARBIDE;

C/SI RATIO; LATTICE POLARITY; THERMALLY ACTIVATED PROCESSES;

DOPING (ADDITIVES);

EID: 30344439122     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.030     Document Type: Conference Paper

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