Parameter study of intrinsic carbon doping of AlxGa 1-xAs by MOCVD

Journal of Crystal Growth

Volumn 271, Issue 3-4, 2004, Pages 376-384

  Van Deelen, J ^a   Bauhuis, G J ^a   Schermer, J J ^a   Larsen, P K ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

A3. Metalorganic chemical vapor deposition; Al. Doping; B1. Carbon; B1. Gallium compounds; B2. Semiconducting III V materials

Indexed keywords

BONDING; CARBON; CHEMICAL BONDS; CONCENTRATION (PROCESS); CRYSTAL GROWTH; DOPING (ADDITIVES); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARAMETER ESTIMATION; SUBSTRATES; THERMAL EFFECTS;

ALUMINUM FRACTION; CARBON ATOMS; DOPING MATERIALS; GROWTH TEMPERATURE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 7544250468     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.008     Document Type: Article

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