Growth of p-Type SiC Layer by Sublimation Epitaxy

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 205-208

  Ohta, S ^a   Furusho, T ^a   Takagi, H ^a   Ohshima, S ^a   Nisino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Boron Doping; P Type; Sublimation Epitaxy

Indexed keywords

BORON; CARRIER CONCENTRATION; DOPING (ADDITIVES); EPITAXIAL GROWTH; SUBLIMATION;

GROWTH TEMPERATURE;

SILICON CARBIDE;

EID: 18744428672     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.205     Document Type: Conference Paper

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