Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxy

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 II, 2002, Pages 1230-1234

  Syvajarvi M ^a   Yakimova, R ^a   Kakanakova Georgieva, A ^a   Sridhara, S G ^a   Linnarsson, M K ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

A1. Impurities; A1. Mass transfer; A3. Physical vapor deposition processes; B2. Semiconducting silicon compunds

Indexed keywords

ALUMINUM; BORON; CATHODOLUMINESCENCE; CRYSTAL IMPURITIES; LOW TEMPERATURE OPERATIONS; MASS TRANSFER; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS; SUBLIMATION;

SUBLIMATION EPITAXY;

EPITAXIAL GROWTH;

EID: 0036531556     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02177-7     Document Type: Article

References (10)