Impurity-controlled dopant activation - The role of hydrogen in p-type doping of SiC

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 561-564

  Aradi, B ^a   Gali, A ^a   Deak P ^a   Son, N T ^b   Janzen E ^b  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Dopants; Hydrogen; Incorporation; Passivation; Theory

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); CRYSTAL GROWTH; DOPING (ADDITIVES); HYDROGEN; PASSIVATION; BORON; CALCULATIONS; CHEMICAL ACTIVATION;

HYDROGEN COMPLEXES; REACTIVATION ENERGY; SUPERCELLS; ALUMINUM CONCENTRATION; HYDROGEN INCORPORATION; INCORPORATION; NATURAL CONTAMINANTS; ORDERS OF MAGNITUDE; SUPERCELL CALCULATIONS; THEORY; VIBRATION FREQUENCY;

SILICON CARBIDE;

EID: 8744246521     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.561     Document Type: Article

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