4H-SiC p-n diodes and gate turnoff thyristors for high-power, high-temperature applications

Solid-State Electronics

Volumn 44, Issue 2, 2000, Pages 303-308

  Agarwal, Anant K ^c   Seshadri, Suresh ^a   MacMillan, Michael ^a   Mani, Sita S ^a   Casady, Jeffrey ^a   Sanger, Phillip ^a   Shah, Pankaj ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN; HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; JUNCTION GATE FIELD EFFECT TRANSISTORS; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THYRISTORS;

DISLOCATION DENSITY; JFET CONTROLLED THYRISTOR; MICROPIPE DENSITY; POWER SWITCHING DEVICE; SUBSTRATE DOPING; TURN OFF MEASUREMENT;

SEMICONDUCTOR DIODES;

EID: 0034141005     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00236-1     Document Type: Article

References (7)

1. Agarwal A.K. SiC Electronics. 1996;IEDM Tech Dig.
2. +n junction diodes. I. DC properties. IEEE Transactions on Electron Devices. 46:(3):1999;478-484.
3. Tone K., Zhao J.H. A comparative study of C plus Al co-implantation and Al implantation in 4H- and 6H-SiC. IEEE Transactions on Electron Devices. 46:(3):1999;612-619.
4. US Patent No. 5,614,737, MOS-controlled high-power thyristor, March 25, 1997.
5. Agarwal A.K., Seshadri S., Rowland L.B. Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors. IEEE Electron Device Letters. 18:(12):1997;592-594.
6. Agarwal A.K., Casady J.B., Rowland L.B., Seshadri S., Siergiej R.R., Valek W.F., Brandt C.D. 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's). IEEE Electron Device Letters. 18:(11):1997;518-520.
7. Seshadri S, Casady JB, Agarwal AK, Siergiej RR, Rowland LB, Sanger PA, Brandt CD, Barrow J, Piccone D. Turn-off characteristics of 1000 V SiC gate turn-off thyristors, presented at the 10th International Symposium on Power Semiconductor Devices and ICs. (ISPD'98), Kyoto, Japan, June 3-6 1998.