Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method

Journal of Crystal Growth

Volumn 240, Issue 1-2, 2002, Pages 117-123

  Straubinger, T L ^a   Bickermann, M ^a   Weingartner R ^a   Wellmann, P J ^a   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

A1. Doping; A2. Growth from vapor; B2. Semiconducting silicon compounds

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CRYSTAL DEFECTS; MASS TRANSFER; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SINGLE CRYSTALS; SUBLIMATION;

PHYSICAL VAPOR TRANSPORT (PVT) GROWTH;

CRYSTAL GROWTH;

EID: 0036538794     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)00917-X     Document Type: Article

References (19)