Comparison of high-voltage 4H-SiC insulated-gate bipolar transistor (IGBT) and MOS-gated bipolar transistor (MGT)

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 917-920

  Lin, Zhu ^a   Balachandran, Santosh ^a   Chow, T Paul ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

4H; IGBT; MGT; SiC; Simulation; Transistor

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; LIGHT MODULATION; MOS DEVICES; SILICON CARBIDE;

BLOCKING VOLTAGES; DRIFT REGION; MOS-GATED BIPOLAR TRANSISTOR (MGT);

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 35148840580     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (4)

1. Y. Tang, N. Ramungul and T. P. Chow: Mater. Sci. Forum Vol. 338-342 (2000), p.1415.
2. R. Singh, S. Ryu, D. C. Capell and J. W. Palmour: IEEE Trans. on Electron Devices, Vol. 50 (2003), p.774.
3. T. Tanaka, Y. Yasuda and M. Ohayashi: IEEE Trans. on Electron Devices, Vol. ED-33 (1986), p.2041.
4. T. P. Chow: Electrochemical Society Proceedings, Vol. 98-12 (1998), p.16.