XPS studies on nitridation of InP(100) surface by N+2 ion beam bombardment

Journal of Physics D: Applied Physics

Volumn 29, Issue 12, 1996, Pages 2997-3002

  Pan, J S ^a   Wee, A T S ^a   Huan, C H A ^a   Tan, H S ^a   Tan, K L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPOSITION; IN SITU PROCESSING; INTERFACIAL ENERGY; ION BEAMS; ION BOMBARDMENT; NITRIDES; NITRIDING; SEMICONDUCTOR GROWTH; SPUTTERING; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGULAR DEPENDENCE; ENERGY DEPENDENCE; ION BEAM NITRIDATION; NITRIDATION; SPUTTER REMOVAL;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030403101     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/12/010     Document Type: Article

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