Extremely smooth surface morphologies in N2/H2/CH4 based low energy chemically assisted ion beam etching of InP/GaInAsP

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 374-377

  Carlstrom C F ^a   Anand, S ^a   Landgren, G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Ion beam etching; Surface morphology

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DEGRADATION; MORPHOLOGY; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; ROUGHNESS MEASUREMENT; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

CHEMICALLY ASSISTED ION BEAM ETCHING (CAIBE);

THIN FILMS;

EID: 0032627479     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01725-8     Document Type: Article

References (7)

1. F. Ren, J.W. Lee, C.R. Abernathy, S.J. Pearton, C. Constantine, C. Barrat, R.J. Shul, App. Phys. Lett. 62 (1993) 2697.
2. C.F. Carlström, G. Landgren, S. Anand, J. Vac. Sci. Technol. B 16 (3) (1998) 1018.
3. J.R. Sendra, J. Anguita, Jpn. J. Appl. Phys. 33 (1994) L390.
4. Z. Sobesierski, D.I. Westwood, D.A. Woolf, T. Fukui, H. Hasegawa, J. Vac. Sci. Technol. B 11 (4) (1993) 1723.
5. H. Lispanen, M. Sopanen, M. Taskinen, J. Tulkki, J. Ahopelto, Appl. Phys. Lett. 68 (1996) 2216.
6. S.J. Pearton, U.K. Chakrabarti, in: Avishay Katz (Ed.), Indium Phosphide and Related Materials Processing Technology and Devices, Arctec House, Boston, 1992.
7. N. Carlsson, T. Junno, L. Montelius, M.E. Pistol, L. Samuelson, W. Seifert, J. Cryst. Growth (1998).