Extremely high etch rates of in-based III-V semiconductors in BCl3/N2 based plasma

Journal of the Electrochemical Society

Volumn 143, Issue 10, 1996, Pages 3394-3396

  Ren, F ^a   Hobson, W S ^a   Lothian, J R ^a   Lopata, J ^a   Pearton, S J ^b   Caballero, J A ^b   Cole, M W ^c  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; ELECTRIC DISCHARGES; ELECTRON CYCLOTRON RESONANCE; LASERS; LIGHT EMISSION; NITROGEN; PLASMA ETCHING;

EMISSION INTENSITY; HIGH ETCH RATES; OPTICAL EMISSION SPECTRA; THRESHOLD CURRENT;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030262453     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837218     Document Type: Article

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