High-aspect-ratio chemically assisted ion-beam etching for photonic crystals using a high beam voltage-current ratio

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 1788-1791

  Kotlyar, M V ^a   O'Faolain, L ^a   Wilson, R ^a   Krauss, T F ^a  

^a UNIVERSITY OF ST ANDREWS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ASPECT RATIO; CRYSTALS; HETEROJUNCTIONS; ION BEAMS; IONS; MASKS; PHOTONS; SURFACE ROUGHNESS; THERMAL EFFECTS;

ETCH DEPTH; ETCHING CONDITIONS; MASK SELECTIVITY; WALL PROFILE;

ETCHING;

EID: 4944245125     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1767106     Document Type: Article

References (8)

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