An ICP-RIE etching process for InP-based photonic crystals using Cl 2/Ar/N 2 chemistry

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2005, Issue , 2005, Pages 242-245

  Strasser, P ^a   Wuest R ^a   Robin, F ^a   Rauscher, K ^a   Wild, B ^b   Erni, D ^a   Jackel H ^a  

^a ETH ZURICH   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE DEPTH; HOLE SHAPE; ICP-RIE ETCHING; PHOTONIC CRYSTALS;

CHARACTERIZATION; CRYSTALS; INDUCTIVELY COUPLED PLASMA; LIGHT SOURCES; PHOTONS; REACTIVE ION ETCHING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 33747383126     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517468     Document Type: Conference Paper

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